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| BCR08AM-12 Triac Low Power Use REJ03G0343-0100 Rev.1.00 Aug.20.2004 Features * * * * IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGT : 5 mA Planar Passivation Type Outline TO-92 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Electric fan, air cleaner, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.1.00, Aug.20.2004, page 1 of 6 BCR08AM-12 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Ratings 0.8 8 0.26 1 0.1 6 0.5 - 40 to +125 - 40 to +125 0.23 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave 360 conduction, Tc = 56C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Symbol IDRM VTM VRGT VRGT IRGT IRGT Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 1.0 2.0 2.0 2.0 5 5 Unit mA V V V mA mA Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 1.2 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.1 -- -- V Tj = 125C, VD = 1/2 VDRM Thermal resistance Rth (j-c) -- -- 60 C/W Junction to caseNote3 Critical-rate of rise of off-state (dv/dt)c 0.5 -- -- V/s Tj = 125C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 0.4 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 6 BCR08AM-12 Performance Curves Maximum On-State Characteristics 101 7 5 10 Rated Surge On-State Current Tj = 25C Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) 3 2 100 7 5 3 2 10-1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) 3 2 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics ( II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 0 20 40 60 80 100 120 140 VGM = 6V VGT Typical Example PGM = 1W PG(AV) = 0.1W IGM = 0.5A Gate Voltage (V) IRGT I, IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 10 2 2 3 5 7 103 -60 -40 -20 Gate Current (mA) Junction Temperature (C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Transient Thermal Impedance (C/W) 2 3 4 5 310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 Typical Example 2 Junction to ambient 102 7 5 3 2 101 7 5 3 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction to case 0 20 40 60 80 100 120 140 Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 6 BCR08AM-12 Allowable Case Temperature vs. RMS On-State Current 160 Maximum On-State Power Dissipation 2.0 On-State Power Dissipation (W) 1.8 1.6 360 Conduction 1.4 Resistive, 1.2 inductive loads 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Case Temperature (C) 140 120 100 80 60 40 Curves apply regardless of conduction angle 360 Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 105 7 5 3 2 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 104 7 5 3 2 7 5 3 2 -60 -40 -20 103 360 Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 102 0 20 40 60 80 100 120 140 RMS On-State Current (A) Junction Temperature (C) Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 3 2 Latching Current vs. Junction Temperature 102 7 5 3 2 Typical Example Distribution T2+, G- Typical Example Latching Current (mA) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 T2-, G- Typical Example 0 40 80 120 160 101 -60 -40 -20 0 20 40 60 80 100 120 140 -40 Junction Temperature (C) Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 6 BCR08AM-12 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 Typical Example Tj = 125C I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 0 20 40 60 80 100 120 140 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/s) 101 7 5 3 2 100 7 5 3 2 10-1 10-1 Minimum Characteristics Value Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Typical Example Tj = 125C IT = 1A = 500s VD = 200V Typical Example IRGT I IRGT III III Quadrant I Quadrant 2 3 5 7 100 2 3 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure II Test Procedure III Rev.1.00, Aug.20.2004, page 5 of 6 BCR08AM-12 Package Dimensions TO-92 EIAJ Package Code Conforms JEDEC Code Conforms Mass (g) (reference value) 0.23 Lead Material Cu alloy 5.0 max 4.4 1.25 1.25 Circumscribed circle 0.7 1.1 11.5 min 5.0 max Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB Straight type Vinyl sack 500 Type name +A Lead form Vinyl sack 500 Type name +A - Lead forming code Form A8 Taping 2000 Type name +A - TB Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 3.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. 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